TY - JOUR

T1 - Defining ferroelectric characteristics with reversible piezoresponse: PUND switching spectroscopy PFM characterization

AU - Alikin, Denis

AU - Safina, Violetta

AU - Abramov, Alexander

AU - Slautin, Boris

AU - Shur, Vladimir

AU - Pavlenko, Anatoly

AU - Kholkin, Andrei

N1 - Текст о финансировании #1 The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged. The equipment of the Ural Center for Shared Use ‘Modern nanotechnology’ of Ural Federal University (Reg. # 2968) was used. Текст о финансировании #2 The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged. The equipment of the Ural Center for Shared Use ‘Modern nanotechnology’ of Ural Federal University (Reg. # 2968) was used.

PY - 2024

Y1 - 2024

N2 - Detecting ferroelectricity at micro- and nanoscales is crucial for advanced nanomaterials and materials with complicated topography. Switching spectroscopy piezoresponse force microscopy (SSPFM), which involves measuring piezoelectric hysteresis loops via a scanning probe microscopy tip, is a widely accepted approach to characterize polarization reversal at the local scale and confirm ferroelectricity. However, the local hysteresis loops acquired through this method often exhibit unpredictable shapes, a phenomenon often attributed to the influence of parasitic factors such as electrostatic forces and current flow. Our research has uncovered that the deviation in hysteresis loop shapes can be caused by spontaneous backswitching occurring after polarization reversal. Moreover, we’ve determined that the extent of this effect can be exacerbated when employing inappropriate SSPFM waveform parameters, including duration, frequency, and AC voltage amplitude. Notably, the conventional ‘pulse-mode’ SSPFM method has been found to intensify spontaneous backswitching. In response to these challenges, we have redesigned SSPFM approach by introducing the positive up-negative down (PUND) method within the ‘step-mode’ SSPFM. This modification allows for effective probing of local piezoelectric hysteresis loops in ferroelectrics with reversible piezoresponse while removing undesirable electrostatic contribution. This advancement extends the applicability of the technique to a diverse range of ferroelectrics, including semiconductor ferroelectrics and relaxors, promising a more reliable and accurate characterization of their properties. © 2024 IOP Publishing Ltd.

AB - Detecting ferroelectricity at micro- and nanoscales is crucial for advanced nanomaterials and materials with complicated topography. Switching spectroscopy piezoresponse force microscopy (SSPFM), which involves measuring piezoelectric hysteresis loops via a scanning probe microscopy tip, is a widely accepted approach to characterize polarization reversal at the local scale and confirm ferroelectricity. However, the local hysteresis loops acquired through this method often exhibit unpredictable shapes, a phenomenon often attributed to the influence of parasitic factors such as electrostatic forces and current flow. Our research has uncovered that the deviation in hysteresis loop shapes can be caused by spontaneous backswitching occurring after polarization reversal. Moreover, we’ve determined that the extent of this effect can be exacerbated when employing inappropriate SSPFM waveform parameters, including duration, frequency, and AC voltage amplitude. Notably, the conventional ‘pulse-mode’ SSPFM method has been found to intensify spontaneous backswitching. In response to these challenges, we have redesigned SSPFM approach by introducing the positive up-negative down (PUND) method within the ‘step-mode’ SSPFM. This modification allows for effective probing of local piezoelectric hysteresis loops in ferroelectrics with reversible piezoresponse while removing undesirable electrostatic contribution. This advancement extends the applicability of the technique to a diverse range of ferroelectrics, including semiconductor ferroelectrics and relaxors, promising a more reliable and accurate characterization of their properties. © 2024 IOP Publishing Ltd.

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U2 - 10.1088/1361-6528/ad1b97

DO - 10.1088/1361-6528/ad1b97

M3 - Article

VL - 35

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 17

M1 - 175702

ER -