Standard

Application of FEM - Programs to optimize the characteristics of three-phase resistive materials. / Sachkov, I.; Turygina, V.; Ford, V. et al.
In: AIP Conference Proceedings, Vol. 2849, No. 1, 090008, 2023.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Sachkov, I, Turygina, V, Ford, V, Khorev, O & Matkovskaya, A 2023, 'Application of FEM - Programs to optimize the characteristics of three-phase resistive materials', AIP Conference Proceedings, vol. 2849, no. 1, 090008. https://doi.org/10.1063/5.0162124

APA

Sachkov, I., Turygina, V., Ford, V., Khorev, O., & Matkovskaya, A. (2023). Application of FEM - Programs to optimize the characteristics of three-phase resistive materials. AIP Conference Proceedings, 2849(1), [090008]. https://doi.org/10.1063/5.0162124

Vancouver

Sachkov I, Turygina V, Ford V, Khorev O, Matkovskaya A. Application of FEM - Programs to optimize the characteristics of three-phase resistive materials. AIP Conference Proceedings. 2023;2849(1):090008. doi: 10.1063/5.0162124

Author

Sachkov, I. ; Turygina, V. ; Ford, V. et al. / Application of FEM - Programs to optimize the characteristics of three-phase resistive materials. In: AIP Conference Proceedings. 2023 ; Vol. 2849, No. 1.

BibTeX

@article{500e34a2538544cd8d95c72f0ced418a,
title = "Application of FEM - Programs to optimize the characteristics of three-phase resistive materials",
abstract = "The FEM method and program for optimizing the synthesis processes of three - phase thick-film resistors is presented. The program allows calculating the effective conductivities and temperature coefficients of resistance of matrix systems containing circular inclusions characterized by variable sizes, mutual position and conductivity. It is shown that a metal-semiconductor transition can exist in such a system and states with abnormally small TCR (temperature coefficient of resistance) can be realized. {\textcopyright} 2023 American Institute of Physics Inc.. All rights reserved.",
author = "I. Sachkov and V. Turygina and V. Ford and O. Khorev and A. Matkovskaya",
year = "2023",
doi = "10.1063/5.0162124",
language = "English",
volume = "2849",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

RIS

TY - JOUR

T1 - Application of FEM - Programs to optimize the characteristics of three-phase resistive materials

AU - Sachkov, I.

AU - Turygina, V.

AU - Ford, V.

AU - Khorev, O.

AU - Matkovskaya, A.

PY - 2023

Y1 - 2023

N2 - The FEM method and program for optimizing the synthesis processes of three - phase thick-film resistors is presented. The program allows calculating the effective conductivities and temperature coefficients of resistance of matrix systems containing circular inclusions characterized by variable sizes, mutual position and conductivity. It is shown that a metal-semiconductor transition can exist in such a system and states with abnormally small TCR (temperature coefficient of resistance) can be realized. © 2023 American Institute of Physics Inc.. All rights reserved.

AB - The FEM method and program for optimizing the synthesis processes of three - phase thick-film resistors is presented. The program allows calculating the effective conductivities and temperature coefficients of resistance of matrix systems containing circular inclusions characterized by variable sizes, mutual position and conductivity. It is shown that a metal-semiconductor transition can exist in such a system and states with abnormally small TCR (temperature coefficient of resistance) can be realized. © 2023 American Institute of Physics Inc.. All rights reserved.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85176785245

U2 - 10.1063/5.0162124

DO - 10.1063/5.0162124

M3 - Conference article

VL - 2849

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

IS - 1

M1 - 090008

ER -

ID: 48550042