Narrow-gap PbS, which is a semiconductor compound of the АIVВVI group, plays an important role in the creation of optoelectronic devices solar and thermal energy converters of a new generation, photocatalysts, infrared detectors, lasers, and sensors. To expand the scope of thin-film lead sulfide, researchers are using doping, which is the best way to adapt physical properties to next-generation devices. An analysis of the literature showed that metals of groups I-VII and elements with high electron affinity are used for doping. Recently, doping with trivalent rare earth metal ions has become an important research topic, since 4 f -5 d electron orbitals significantly improve the optoelectronic properties of lead sulfide. In the present work, an attempt was made to dope lead sulfide films with yttrium, which provides thermal stability. Doping in the process of chemical deposition of PbS(Y) thin films from aqueous media has a significant perspective, which has an additional advantage, in particular, its adaptation to industrial production. An analysis of publications on the doping of lead sulfide with yttrium indicates that it is possible to obtain PbS:Y in the form of a nanopowder by chemical deposition, the probability of formation of which is proved by calculating the change in the Gibbs energy. We used the calculation method developed earlier and tested on a large number of metal chalcogenides for estimating the conditions for the formation of solid phases PbS, Pb(ОН)2 Y(ОН)3 in three systems: «PbAc2 - Na3Cit - Y(NO3)3 - NH4OH - (NH2)2CS», «PbAc2 - Na3Cit - Y(NO3)3 - Hlac - NH4OH - (NH2)2CS» и «PbAc2 - Na3Cit - Y(NO3)3 - ЭДТА - NH4OH - (NH2)2CS». As a result of the experiments, based on the composition of the reaction bath determined by calculation, PbS films with a content of 0.1 % at. yttrium with a thickness of ~870-980 nm with good adhesion to the glass-ceramic substrate were obtained for the first time. The synthesized films have n -type conductivity determined by the thermopower sign.