The subject of study is conducting tracks on the surface of monocrystalline silicon. The aim of the work is the development of an effective one-stage method for forming conductive elements of electrical circuits on silicon. Method. The deposition of a conductive silver layer is carried out using the method of laser-induced direct transfer from a donor substrate. The selection of laser radiation parameters made it possible to determine the optimal transfer mode to achieve the maximum value of the conductive layer conductivity. The surface topography and chemical composition were studied using scanning and transmission electron microscopy, energy-dispersive X-ray and photoelectron spectroscopy. Main results. The maximum specific conductivity (approximately 54 kS/cm) was obtained when transferring a silver film by laser radiation with a wavelength of 1064 nm, a pulse duration of 120 ns and a power density of 0.21 GW/cm2. The scanning speed in this case was 2000 mm/s, which ensured the arrival of approximately 2 laser pulses at each point of the film, resulting in the transfer of the film material particles to the silicon substrate and their subsequent sintering. Practical significance. The method presented in the work can be used to form the conductive elements of the electrical circuits with high specific conductivity in one stage while simultaneously simplifying the technological process of their formation and reducing its duration.