Introduction. Ferroelectric films are widely used for radiotechnical, microwave microelectronic, sensoric, and energy conversion purposes. Such a diverse application range demands film materials with specific electrophysical properties. For instance, while energy storage applications require materials with a high dielectric constant, energy conversion devices largely use those with a low dielectric constant. The necessary physical properties can be achieved using multicomponent ferroelectric structures, such as solid solutions, composites, and multilayer film structures. Mechanical stresses between the substrate and ferroelectric layers play an extremely important role in dielectric properties of multilayer structures.Aim. Development of a mathematical model quantifying the ferroelectric polarization, static dielectric constant, as well as pyroelectric and electrocaloric properties of multilayered ferroelectric film structures.Materials and methods. The presented model is based on the Landau-Ginzburg-Devonshire model (LGD) considering elasticity equations and using electric induction as the order parameter.Results. The developed mathematical model based on LGD provides for a quantifiable description of dielectric, pyroelectric, and electrocaloric properties of layered ferroelectric structures. This model displays the effect of the thickness ratio of polycrystalline layers and grain size distribution on the dielectric properties of films.Conclusion. The developed quantitative model demonstrates the dependence of the thickness, grain size, and stacking order of ferroelectric layers on the dielectric constant and pyroelectric coefficient of multilayered polycrystalline film structures. The presented model can be applied when optimizing the parameters of multilayer structures with respect to their application area.
Translated title of the contributionELECTROCALORIC EFFECT IN MULTILAYER FERROELECTRIC STRUCTURES
Original languageRussian
Pages (from-to)111-121
Number of pages11
JournalИзвестия высших учебных заведений России. Радиоэлектроника
Volume26
Issue number3
DOIs
Publication statusPublished - 2023

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ID: 42049923