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  1. 1990

  2. 2-DIMENSIONAL ELECTRON-GAS IN INVERSION-LAYERS IN HGTE

    Deryabina, T. I., Kulaev, G. I. & Radantsev, V. F., 1990, In: Soviet physics. Semiconductors. 24, 7, p. 746-748 3 p.

    Research output: Contribution to journal › Article › peer-review

  3. SPECIFIC FEATURES OF 2-DIMENSIONAL ELECTRON-STATES IN INVERSION-LAYERS OF SEMIMETALLIC HG1-XCDXTE WITH FLUCTUATION-STIMULATED BAND OVERLAP

    Radantsev, V. F., Zavyalov, V. V. & Khomutova, S. S., 1990, In: Физика твердого тела. 32, 7, p. 2067-2073 7 p.

    Research output: Contribution to journal › Article › peer-review

  4. 1989

  5. CAPACITANCE OF SURFACE-LAYERS IN KANE SEMICONDUCTORS UNDER SIZE AND MAGNETIC QUANTIZATION CONDITIONS

    Radantsev, V. F., Deryabina, T. I., Zavyalov, V. V., Zverev, L. P., Kulaev, G. I. & Khomutova, S. S., 1989, In: Soviet physics. Semiconductors. 23, 5, p. 213-216 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. PARAMETERS OF SPIN-ORBIT INTERACTION IN THE TWO-DIMENSIONAL ELECTRON-GAS IN LAYERS NEAR THE SURFACE IN NG1-XCDXTE

    Radantsev, V. F., 1989, In: Журнал экспериментальной и теоретической физики. 96, 5, p. 1793-1800 8 p.

    Research output: Contribution to journal › Article › peer-review

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