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  1. 1975

  2. HEATING OF ELECTRONS IN GAAS AT LOW-TEMPERATURES

    Zverev, L. P., Minkov, G. M. & Sumin, N. K., 1975, In: Semiconductors. 9, 4, p. 503-504 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  3. 1974

  4. FUNDAMENTAL ABSORPTION-SPECTRUM OF INDIUM-PHOSPHIDE IN PHOTON ENERGY-RANGE 1.40-1.70 EV

    Emlin, R. V., Zverev, L. P. & Rut, O. E., 1974, In: Semiconductors. 8, 6, p. 796-796 1 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  5. INFLUENCE OF A STRONG MAGNETIC-FIELD ON PHOTOLUMINESCENCE SPECTRUM OF N-TYPE GALLIUM-ARSENIDE

    Zverev, L. P., Minkov, G. M. & Negashev, S. A., 1974, In: Semiconductors. 7, 8, p. 1056-1057 2 p.

    Research output: Contribution to journal › Article › peer-review

  6. MECHANISM OF RADIATIVE RECOMBINATION IN STRONGLY DOPED P-GAAS

    Zverev, L. P., Kruzhaev, V. V. & Negashev, S. A., 1974, In: JETP Letters. 20, 1, p. 22-24 3 p.

    Research output: Contribution to journal › Article › peer-review

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ID: 46974