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  1. 1974

  2. FUNDAMENTAL ABSORPTION-SPECTRUM OF INDIUM-PHOSPHIDE IN PHOTON ENERGY-RANGE 1.40-1.70 EV

    Emlin, R. V., Zverev, L. P. & Rut, O. E., 1974, In: Semiconductors. 8, 6, p. 796-796 1 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  3. INFLUENCE OF A STRONG MAGNETIC-FIELD ON PHOTOLUMINESCENCE SPECTRUM OF N-TYPE GALLIUM-ARSENIDE

    Zverev, L. P., Minkov, G. M. & Negashev, S. A., 1974, In: Semiconductors. 7, 8, p. 1056-1057 2 p.

    Research output: Contribution to journal › Article › peer-review

  4. MECHANISM OF RADIATIVE RECOMBINATION IN STRONGLY DOPED P-GAAS

    Zverev, L. P., Kruzhaev, V. V. & Negashev, S. A., 1974, In: JETP Letters. 20, 1, p. 22-24 3 p.

    Research output: Contribution to journal › Article › peer-review

  5. 1975

  6. CURRENT FILAMENTATION IN IMPURITY BREAKDOWN IN N-TYPE GAAS

    Zverev, L. P., Minkov, G. M. & Sumin, N. K., 1975, In: Semiconductors. 8, 11, p. 1457-1458 2 p.

    Research output: Contribution to journal › Article › peer-review

  7. HEATING OF ELECTRONS IN GAAS AT LOW-TEMPERATURES

    Zverev, L. P., Minkov, G. M. & Sumin, N. K., 1975, In: Semiconductors. 9, 4, p. 503-504 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  8. Investigations of the absorption edge of InP in a strong magnetic field

    Zverev, L. P., Emlin, K. V. & Rut, O. E., 1 Jan 1975, In: physica status solidi (b). 68, 1, p. 93-97 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. OPTICAL HEATING OF ELECTRONS IN GaAs

    Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1975, In: Semiconductors. 9, 11, p. 1420-1421 2 p.

    Research output: Contribution to journal › Article › peer-review

  10. 1976

  11. DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.

    Zverev, L. P., Kruzhaev, V. V., Negashev, S. A. & Min'kov, G. M., 1 Jan 1976, In: Semiconductors. 10, 3, p. 337-338 2 p.

    Research output: Contribution to journal › Article › peer-review

  12. MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.

    Zverev, L. P., Min'kov, G. M., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In: Semiconductors. 10, 12, p. 1388-1390 3 p.

    Research output: Contribution to journal › Article › peer-review

  13. METHOD FOR DETERMINATION OF THE CONDUCTION MECHANISM IN SEMICONDUCTORS.

    Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1976, In: Semiconductors. 10, 4

    Research output: Contribution to journal › Article › peer-review

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ID: 46974